TQM110NB04CR RLG

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Overview of TQM110NB04CR RLG

Part NumberTQM110NB04CR RLG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 40V 12A/54A 8PDFNU
DatasheetsDownload TQM110NB04CR RLG Datasheet PDFPDF Icon
Price for TQM110NB04CR RLG

Specification of TQM110NB04CR RLG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1352 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 68W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
8-PDFNU (5x6)
Package / Case
8-PowerTDFN

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